MOVPE growth of QWIP detectors using tBAs as an alternative arsenic precursor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6206 I, Issue , 2006, Pages

  Asplund, Carl ^a   Malm, Hedda ^a   Martijn, Henk ^a  

^a ACREO AB   (Sweden)

Author keywords

AlGaAs; Arsine; C incorporation; Dark current; FPA; MOVPE; O incorporation; QWIP; Response; TBAs; Tertiarybutylarsine

Indexed keywords

ARSENIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TOXICITY;

ARSINE; C-INCORPORATION; DARK CURRENT; FOCAL PLANE ARRAYS (FPA); O-INCORPORATION; TERTIARYBUTYLARSINE;

INFRARED DETECTORS;

EID: 33747743098     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.668358     Document Type: Conference Paper

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