Safety benefits of using a sub-atmospheric pressure hydride gas source for MOCVD

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 822-828

  Raynor, Mark W ^a   Houlding, Virginia H ^a   Frye, Russell ^b   Olander, Karl ^b  

^a Matheson Tri Gas Inc   (United States)

^b ENTEGRIS INC   (United States)

Author keywords

A1. Adsorption; A1. Sub atmospheric pressure gas source; A2. Safety; B1. Hydride gases

Indexed keywords

ACCIDENT PREVENTION; ADSORPTION; ATMOSPHERIC PRESSURE; HYDRIDES; ORIFICES; SEMICONDUCTOR MATERIALS; TOXIC MATERIALS;

GAS RELEASE; HYDRIDE GASES; SUB-ATMOSPHERIC PRESSURE GAS SOURCE; TOXIC GASES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 9944249480     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.096     Document Type: Conference Paper

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7. M.W. Raynor, V.H. Houlding, R. Frye, S. Griffing, A. Clark, B. Walterson, J. Crystal Growth 261 (2004) 241-248.