The effect of rapid thermal annealing on GaAsSbN quantum-well and GaAsSbN bulk lattice-matched to GaAs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 421-423

  Wicaksono, S ^a   Yoon, S F ^a   Fan, W J ^a   Loke, W K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

BANDGAP SHIFT; GAASSBN; INTENSITY IMPROVEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747403414     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517518     Document Type: Conference Paper

References (11)

1. G. Ungaro, G. Le Roux, R. Teissier, and J.C. Harmand, Electron. Lett. 35, 1246, (1999)
2. S.Wicaksono, S.F. Yoon, K.H. Tan, W.K. Loke, J. Vac. Sci. Technol. B, to be published.
3. J.C.Harmand, A. Caliman, E.V.K. Rao, J.Ramos, R.Teissier, L. Travers, G.Unguro, B.Theys, and I.F.L.Dias, Semicond.Sci.Technol. 17, 778 (2002).
4. J.C.Harmand, G.Ungaro, J.Ramos, E.V.K. Rao, G.Saint-Girons, R.Teissier, G. Le Roux, L. Largeau, G.Patriarche, J.Crystal Growth 227-228, 553 (2001)
5. G.M.Peuke, K.E. Waldrip, T.W. Hargett, N.A. Modine, D.K. Serkland, J. Crystal Growth, 261, 398, (2004)
6. L.F. Bian, D.S. Jiang, P.H. Tan, S.L. Lu, B.Q.Sun, L.H. Li, J.C. Harmand, Solid State Communications, 132, 707, (2004)
7. E. Hall, R. Naone, J. E. English, H.-R. Blank, J. Champlain, and H. Kroemer, J.Vac.Sci.Technol.B 16, 2660, (1998)
8. S.G. Spruytte, C.W.Coldren, J.S. Harris, W. Wampler, P. Krispin, K. Ploog, M.C. Larson, J. Appl. Phys, 89, 4401, (2001)
9. O.M. Khreis, K.P. Homewood, W.P. Gillin, K.E. Singer, J.Appl.Phys, 84, 4017, (1998)
10. Y.X. Dang,W.J. Fan, S.T.Ng, S.Wicaksono, S.F. Yoon, and D.H.Zhang, Appl. Phys. Lett, under review.
11. S.Senz, U. Egger, M. Schultz, U. Gösele, H. Ito, J.Appl.Phys 84, 2547, (1998)