Electrodeposited Pt/InP schottky barriers with large barrier heights and large hydrogen sensitivity for sensor chips using InP-based uantum wire networks

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 533-536

  Kimura, Takeshi ^a   Sato, Taketomo ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; PARTIAL PRESSURE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSIENTS;

HYDROGEN SENSOR CHIP; QUANTUM WIRE NETWORK; SCHOTTKY BARRIER HEIGHTS (SBH); SEMICONDUCTOR INTERFACE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33747397926     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517551     Document Type: Conference Paper

References (10)

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