Transient heat transfer in batch thermal reactors for silicon wafer processing

International Journal of Heat and Mass Transfer

Volumn 41, Issue 11, 1998, Pages 1549-1557

  Fan, Yong Hui ^a   Qiu, Taiqing ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS; TEMPERATURE CONTROL; TEMPERATURE DISTRIBUTION;

BATCH THERMAL REACTORS;

HEAT TRANSFER;

BATCH PROCESS; HEAT TRANSFER; REACTOR; SEMICONDUCTOR; SILICON;

EID: 0032103746     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0017-9310(97)00207-X     Document Type: Article

References (22)

1. Hu, S. M., Temperature distribution and stresses in circular wafers in a row during radiative cooling. Journal of Applied Physics, 1969, 40, 4413-4423.
2. Mokuya, K. and Matsuba, I., Characteristics of the transient wafer temperature distribution in a furnace for semiconductor fabrication processes. Electronics and Communications in Japan, Part 2, 1987, 70, 59-65.
3. Mokuya, K., Matsuba, I. and Matsumoto, K., Transient model of wafer temperature in a furnace for semiconductor fabrication process. Electronics and Communications in Japan, Part 2, 1986, 69, 1-11.
4. Van Schravendijk, B. J. and De Koning, W. L., Modeling and control of the wafer temperatures in a diffusion furnace. Journal of Applied Physics, 1987, 61, 1620-1627.
5. Tavel, M. A. and Hearn, E. W., An interactive computer simulation of heating and cooling a row of silicon wafers. Journal of the Electrochemical Society, 1988, 135, 1266-1271.
6. Fan, Y. H. and Qiu, T. W., Analyses of thermal stresses and control schemes for fast temperature ramps of batch furnaces. IEEE Transactions on Semiconductor Manufacturing, 1997, 10, 433-437.
7. Badgwell, T. A., Edgar, T. F. and Trachtenberg, I., Experimental verification of a fundamental model for multi-wafer low pressure chemical vapor deposition of polysilicon. Journal of the Electrochemical Society, 1992, 139, 524-532.
8. Badgwell, T. A., Edgar, T. F. and Trachtenberg, I., Modeling and scale-up of multi-wafer LPCVD reactors. AIChE Journal 1992, 38, 926-938.
9. Sato, T., Spectral emissivity in silicon. Japanese Journal of Applied Physics, 1967, 3, 339-347.
10. Vandenabeele, P. and Maex, K., Emissivity of silicon wafers during rapid thermal processing. In Rapid Thermal and Related Processing Techniques, ed. R. Singh and M. Moslehi. SPIE, Santa Clara, CA, 1990, pp. 316-336.
11. Jellison, Jr, G. E. and Lowndes, D. H., Optical absorption coefficient of silicon at 1.152 μ at elevated temperature. Applied Physics Letters, 1982, 41, 594-596.
12. Jellison, Jr, G. E., Optical and electrical properties of pulsed laser-annealed silicon. In Semiconductors and Semimetal, Vol. 23, ed. R. F. Wood and C. W. White. Academic Press, New York, 1984, pp. 95-163.
13. Siegel, R, and Howell, J. R., Thermal Radiation Heat Transfer, 2nd edn. McGraw-Hill, New York, 1981.
14. Schornhorst, J. R. and Viskanta, R., An experimental examination of the validity of the commonly used methods of radiant heat transfer analysis. Journal of Heat Transfer, 1968, 90, 429-436.
15. Touloukian, Y. S., Powell, P. W., Ho, C. Y. and Klemens, P. G., Thermophysical Properties of Matter, Vol. 1. IFI/Plenum, New York, 1970, p. 339.
16. Huff, H. R. and Goodall, R. K., Silicon wafer thermal processing : 300 mm issues. Proceedings of the 2nd International Symposium on Advanced Science and Technology of Silicon Materials, 1996, pp. 322-353.
17. Bentini, G., Correra, L. and Donolato, C., Defects introduced in silicon wafers during rapid isothermal annealing: thermoelastic and thermoplastic effects. Journal of Applied Physics, 1984, 56, 2922-2929.
18. Schroter, W., Brion, H. G. and Siethoff, H., Yield point and dislocation mobility in silicon and germanium. Journal of Applied Physics, 1983, 54, 1816-1920.
19. Yonenaga, I, and Sumino, K., Mechanical strength of silicon crystals as a function of the oxygen concentration. Journal of Applied Physics, 1984, 56, 2346-2350.
20. Leroy, B. and Plougonven, C., Warpage of silicon wafers. Journal of the Electrochemical Society, 1980, 127, 961-970.
21. Alexander, H. and Haasen, P., Dislocations and plastic flow in the diamond structure. Solid State Physics, 1968, 22, 27-158.
22. Siethoff, H. and Haasen, P., Yield point and dislocation mobility in silicon. In Lattice Defects in Semiconductors, ed. R. R. Hasiguti. University of Tokyo, 1966, pp. 491-499.