메뉴 건너뛰기




Volumn 10, Issue 4, 1997, Pages 433-437

Analyses of thermal stresses and control schemes for fast temperature ramps of batch furnaces

Author keywords

Batch furnaces; Thermal processing

Indexed keywords

MATHEMATICAL MODELS; SILICON WAFERS; STRESS ANALYSIS; TEMPERATURE DISTRIBUTION; THERMAL STRESS; THERMOELASTICITY;

EID: 0031276072     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.641485     Document Type: Article
Times cited : (10)

References (28)
  • 1
    • 6044221367 scopus 로고    scopus 로고
    • Fast thermal processing: Batch comes back
    • A. Dip, "Fast thermal processing: Batch comes back," Solid State Technol., no. 6, pp. 113-124, 1996.
    • (1996) Solid State Technol. , Issue.6 , pp. 113-124
    • Dip, A.1
  • 2
    • 0030106015 scopus 로고    scopus 로고
    • Next generation challenges to thermal processing
    • C. Lee and G. C. Noblitt III, "Next generation challenges to thermal processing," Semicond. Int., vol. 19, no. 3, pp. 73-78, 1996.
    • (1996) Semicond. Int. , vol.19 , Issue.3 , pp. 73-78
    • Lee, C.1    Noblitt III, G.C.2
  • 3
    • 0014583140 scopus 로고
    • Temperature distribution and stresses in circular wafers in a row during radiative cooling
    • S. M. Hu, "Temperature distribution and stresses in circular wafers in a row during radiative cooling," J. Appl. Phys., vol. 40, no. 2, pp. 4413-4423, 1969.
    • (1969) J. Appl. Phys. , vol.40 , Issue.2 , pp. 4413-4423
    • Hu, S.M.1
  • 4
    • 0023536270 scopus 로고
    • Characteristics of the transient wafer temperature distribution in a furnace for semiconductor fabrication processes
    • K. Mokuya and I. Matsuba, "Characteristics of the transient wafer temperature distribution in a furnace for semiconductor fabrication processes," Electron. Commun. Jpn., pt. 2, vol. 70, no. 12, pp. 59-65, 1987.
    • (1987) Electron. Commun. Jpn. , vol.70 , Issue.12 PART 2 , pp. 59-65
    • Mokuya, K.1    Matsuba, I.2
  • 5
    • 0022566306 scopus 로고
    • Transient model of wafer temperature in a furnace for semiconductor fabrication process
    • K. Mokuya, I. Matsuba, and K. Matsumoto, "Transient model of wafer temperature in a furnace for semiconductor fabrication process," Electron. Commun. Jpn., pt. 2, vol. 69, no. 4, pp. 1-11, 1986.
    • (1986) Electron. Commun. Jpn. , vol.69 , Issue.4 PART 2 , pp. 1-11
    • Mokuya, K.1    Matsuba, I.2    Matsumoto, K.3
  • 6
    • 36549092171 scopus 로고
    • Modeling and control of the wafer temperatures in a diffusion furnace
    • B. J. Van Schravendijk and W. L. De Koning, "Modeling and control of the wafer temperatures in a diffusion furnace," J. Appl. Phys., vol. 61, no. 4, pp. 1620-1627, 1987.
    • (1987) J. Appl. Phys. , vol.61 , Issue.4 , pp. 1620-1627
    • Van Schravendijk, B.J.1    De Koning, W.L.2
  • 7
    • 84975348892 scopus 로고
    • Minimizing process-induced slip in silicon wafers by slow heating and cooling
    • A. W. Fisher and G. L. Schnable, "Minimizing process-induced slip in silicon wafers by slow heating and cooling," J. Electrochem. Soc., vol. 123, no. 3, pp. 434-435, 1976.
    • (1976) J. Electrochem. Soc. , vol.123 , Issue.3 , pp. 434-435
    • Fisher, A.W.1    Schnable, G.L.2
  • 8
    • 0027809921 scopus 로고
    • Four types and origins of transient Si wafer deformation with furnace insertion and withdrawal
    • M. Itsumi and J. Kai, "Four types and origins of transient Si wafer deformation with furnace insertion and withdrawal," Jpn. J. Appl. Phys., vol. 32, pp. 5468-5472, 1993.
    • (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 5468-5472
    • Itsumi, M.1    Kai, J.2
  • 9
    • 0021517521 scopus 로고
    • Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effects
    • G. Bentini, L. Correra, and C. Donolato, "Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effects," J. Appl. Phys., vol. 55, no. 10, pp. 2922-2929, 1984.
    • (1984) J. Appl. Phys. , vol.55 , Issue.10 , pp. 2922-2929
    • Bentini, G.1    Correra, L.2    Donolato, C.3
  • 11
    • 0024054627 scopus 로고
    • Thermal and stress analysis of semiconductor wafers in a rapid thermal processing oven
    • Aug.
    • H. A. Lord, "Thermal and stress analysis of semiconductor wafers in a rapid thermal processing oven," IEEE Trans. Semiconduct. Manufact., vol. 1, no. 3, pp. 105-114, Aug. 1988.
    • (1988) IEEE Trans. Semiconduct. Manufact. , vol.1 , Issue.3 , pp. 105-114
    • Lord, H.A.1
  • 12
    • 0024765999 scopus 로고
    • Process uniformity and slip dislocation patterns in linearly ramped-temperature transient rapid thermal processing of silicon
    • Nov.
    • M. M. Moslehi, "Process uniformity and slip dislocation patterns in linearly ramped-temperature transient rapid thermal processing of silicon," IEEE Trans. Semiconduct. Manufact., vol. 2, no. 4, pp. 130-140, Nov. 1989.
    • (1989) IEEE Trans. Semiconduct. Manufact. , vol.2 , Issue.4 , pp. 130-140
    • Moslehi, M.M.1
  • 13
    • 0029357740 scopus 로고
    • Thermal uniformity and stress minimization during rapid thermal processes
    • Aug.
    • R. H. Perkins, T. J. Riley, and R. S. Gyurcsik, "Thermal uniformity and stress minimization during rapid thermal processes," IEEE Trans. Semiconduct. Manufact., vol. 8, no. 3, pp. 272-279, Aug. 1995.
    • (1995) IEEE Trans. Semiconduct. Manufact. , vol.8 , Issue.3 , pp. 272-279
    • Perkins, R.H.1    Riley, T.J.2    Gyurcsik, R.S.3
  • 15
    • 0001150263 scopus 로고
    • Spectral emissivity of silicon
    • T. Sato, "Spectral emissivity of silicon," Jpn. J. Appl. Phys., vol. 3, p. 339, 1967.
    • (1967) Jpn. J. Appl. Phys. , vol.3 , pp. 339
    • Sato, T.1
  • 16
    • 0025791176 scopus 로고
    • Emissivity of silicon wafers during rapid thermal processing
    • R. Singh and M. Moslehi, Eds. Santa Clara, CA: SPIE, Oct.
    • P. Vandenabeele and K. Maex, "Emissivity of silicon wafers during rapid thermal processing," in Rapid Thermal and Related Processing Techniques, R. Singh and M. Moslehi, Eds. Santa Clara, CA: SPIE, Oct. 1990, pp. 316-336.
    • (1990) Rapid Thermal and Related Processing Techniques , pp. 316-336
    • Vandenabeele, P.1    Maex, K.2
  • 18
    • 0029159063 scopus 로고
    • Thermal modeling of tubular horizontal hot-wall low pressure chemical vapor deposition reactors
    • C. Azzaro and J. P. Coudere, "Thermal modeling of tubular horizontal hot-wall low pressure chemical vapor deposition reactors," Chem. Eng. J., vol. 57, pp. 39-52, 1995.
    • (1995) Chem. Eng. J. , vol.57 , pp. 39-52
    • Azzaro, C.1    Coudere, J.P.2
  • 22
    • 0019009114 scopus 로고
    • Warpage of silicon wafers
    • B. Leroy and C. Plougonven, "Warpage of silicon wafers," J. Electrochem. Soc., vol. 127, pp. 961-970, 1980.
    • (1980) J. Electrochem. Soc. , vol.127 , pp. 961-970
    • Leroy, B.1    Plougonven, C.2
  • 23
    • 0021510168 scopus 로고
    • Mechanical strength of silicon crystals as a function of the oxygen concentration
    • I. Yonenaga and K. Sumino, "Mechanical strength of silicon crystals as a function of the oxygen concentration," J. Appl. Phys., vol. 56, no. 8, pp. 2346-2350, 1984.
    • (1984) J. Appl. Phys. , vol.56 , Issue.8 , pp. 2346-2350
    • Yonenaga, I.1    Sumino, K.2
  • 24
    • 0020734815 scopus 로고
    • Yield point and dislocation mobility in silicon and germanium
    • W. Schroter, H. G. Brion, and H. Siethoff, "Yield point and dislocation mobility in silicon and germanium," J. Appl. Phys., vol. 54, no. 4, pp. 1816-1920, 1983.
    • (1983) J. Appl. Phys. , vol.54 , Issue.4 , pp. 1816-1920
    • Schroter, W.1    Brion, H.G.2    Siethoff, H.3
  • 25
    • 84911517584 scopus 로고
    • Yield point and dislocation mobility in silicon
    • R. R. Hasiguti, Ed. Tokyo, Japan: Univ. Tokyo Press
    • H. Siethoff and P. Haasen, "Yield point and dislocation mobility in silicon," in Lattice Defects in Semiconductors, R. R. Hasiguti, Ed. Tokyo, Japan: Univ. Tokyo Press, 1966, pp. 491-499.
    • (1966) Lattice Defects in Semiconductors , pp. 491-499
    • Siethoff, H.1    Haasen, P.2
  • 26
    • 77956902592 scopus 로고
    • Dislocations and plastic flow in the diamond structure
    • H. Alexander and P. Haasen, "Dislocations and plastic flow in the diamond structure," Solid State Phys., vol. 22, pp. 27-158, 1968.
    • (1968) Solid State Phys. , vol.22 , pp. 27-158
    • Alexander, H.1    Haasen, P.2
  • 27
    • 0030192854 scopus 로고    scopus 로고
    • The analysis of bending stress and mechanical property of ultralarge diameter silicon wafers at high temperatures
    • T. Fukuda, "The analysis of bending stress and mechanical property of ultralarge diameter silicon wafers at high temperatures," Jpn. J. Appl. Phys., vol. 35, pt. 1, no. 7, pp. 3799-3896, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , Issue.7 PART 1 , pp. 3799-3896
    • Fukuda, T.1
  • 28
    • 33747467531 scopus 로고    scopus 로고
    • Transient heat transfer in batch furnaces for semiconductor wafer processing
    • to be published
    • Y. H. Fan and T. Q. Qiu, "Transient heat transfer in batch furnaces for semiconductor wafer processing," Int. J. Heat Mass Transfer, to be published.
    • Int. J. Heat Mass Transfer
    • Fan, Y.H.1    Qiu, T.Q.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.