Properties of a pn junction developed with a Si microprobe by vapour-liquid-solid growth using in situ doping

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1364-1368

  Islam, M S ^a   Kawashima, T ^a   Sawada, K ^a   Ishida, M ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; PHOTODETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SENSORS;

AU-CATALYZED VAPOUR-LIQUID-SOLID (VLS); N-TYPE SI-MICROPROBE ARRAYS; PHOTOSENSITIVE EMITTER ARRAY DEVICES; PN JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 33747298584     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/025     Document Type: Article

References (11)

1. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
2. Ishida M, Sawada K, Ishikawa A and Fuji M 1999 Proc. 10th Int. Conf. Solid-State Sensors and Actuators (Sendai, Japan) p 866
3. Kawano T, Kato Y, Futagawa M, Takao H, Sawada K and Ishida M 2002 Sensors Actuators A 97-98 709
4. Asai S, Kato K, Nakazaki N and Nakajima Y 1996 IEEE Trans. Compon. Packag. Manuf. Technol. 19 258
5. Kawano T, Ishihara A, Harimoto T, Takao H, Sawada K, Usui S and Ishida M 2004 IEEE IEDM p 1014
6. Kawano T, Kato Y, Tani R, Takao H, Sawada K and Ishida M 2004 IEEE Trans. Electron Devices 51 415
7. Islam M S, Ishino H, Kawano T, Takao H, Sawada K and Ishida M 2005 Japan. J. Appl. Phys. 44 2161
8. Gao F, Huang D D, Li J P, Lin Y X, Kong M Y, Sun D Z, Li J M and Lin L Y 2000 J. Cryst. Growth 220 461
9. Streetman Ben G 1994 Solid State Electronic Devices 3rd edn (New Delhi: Prentice-Hall) p 142
10. Duhayon N, Xu M, Vandervorst W, Hellemans L, Rochefort C and Dalen R V 2003 Mater. Sci. Eng. B 102 143
11. Choi H W, Jeon C W and Dawson M D 2004 J. Cryst. Growth 268 527