Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 423-426

  Bugge, F ^a   Zeimer, U ^a   Wenzel, H ^a   Staske, R ^a   Sumpf, B ^a   Erbert, G ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTROMAGNETIC WAVE EMISSION; EPITAXIAL GROWTH; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES; SEMICONDUCTING INDIUM;

CRYSTAL QUALITY; EFFICIENT LASERS; STRAINED INGAAS QUANTUM WELLS; WAVEGUIDE LAYERS;

SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BROAD-AREA LASER DIODE; CRYSTAL QUALITIES; DOPING PROFILES; HIGHLY STRAINED; INGAAS QUANTUM WELLS; OUTPUT POWER; STRIPE WIDTH; THICK WAVEGUIDE LAYERS;

EID: 33646178964     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564120     Document Type: Conference Paper

References (3)

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2. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, Appl. Phys. Lett. 79, 1965 (2001).
3. A. Knauer, G. Erbert, R. Staske, B. Sumpf, H. Wenzel, and M. Weyers, Semicond. Sci. Technol. 20, 621 (2005).