AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 6448-6451

  Fares, B ^a   Dubois, C ^a   Gautier, B ^a   Dupuy, J C ^a   Cayrel, F ^b   Gaudin, G ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

AFM; Cavities; RMS roughness; Silicon; SIMS; Topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; ION BEAMS; MORPHOLOGY; SEMICONDUCTING SILICON; SPUTTERING; SURFACE ROUGHNESS;

CAVITIES; CRATER BOTTOMS; RMS ROUGHNESS; TOPOGRAPHY;

SECONDARY ION MASS SPECTROMETRY;

EID: 33747200480     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.253     Document Type: Article

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