Colloidal quantum dot active layers for light emitting diodes

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1461-1465

  Pagan, Jennifer G ^a,b   Stokes, Edward B ^a   Patel, Kinnari ^a   Burkhart, Casey C ^a   Ahrens, Michael T ^b   Barletta, Philip T ^b   O'Steen, Mark ^c  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b Dot Metrics Technologies   (United States)

^c Veeco Compound Semiconductor Inc   (United States)

Author keywords

CdSe; Heterostructure; LED; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; COLLOIDS; DOPING (ADDITIVES); ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; MAGNESIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS;

CDSE; CIRCULAR TRANSMISSION LINE METHOD (CTLM); IDEALITY FACTOR;

LIGHT EMITTING DIODES;

EID: 33747193807     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.06.009     Document Type: Article

References (11)

1. Arakawa Y., and Sakaki H. Appl Phys Lett 40 11 (1982)
2. Asada M., Miyamoto Y., and Suematsu Y. J IEEE Quantum Elect QE-22 (1986) 9
3. Alivisatos A.P. Science 271 5251 (1996) 933-937
4. O'Donnell K.P., Martin R.W., and Middleton P.G. Phys Rev Lett 82 1 (1999) 237-240
5. Mueller A., Petruska M.A., Acherman M., Werder D., Akhadov E.A., Koleske D., et al. Nano Lett 5 6 (2005) 1039-1044
6. Haus E., Smorchkova I.P., Heying B., Fini P., Poblenz C., Mates T., et al. J Cryst Growth 246 (2002) 55-63
7. Chen N.C., Tseng C.Y., Chiu A.P., Shih C.F., and Chang P.H. Appl Phys Lett 85 25 (2004) 6086-6088
8. Bhattacharyya A., Li W., Cabalu J., Moustakas T.D., Smith D.J., and Hervig R.L. Appl Phys Lett 85 21 (2004) 4956-4958
9. Sah C., Noyce R.N., and Shockley W. Proc IRE 45 1228 (1957)
10. Shah J.M., Li Y.-L., and Schubert E.F. J Appl Phys 94 4 (2003)
11. Cao X.A., Stokes E.B., Sandvik P.M., LeBoeuf S.F., Kretchmer J., and Walker D. IEEE Elec Dev Lett 23 9 (2002)