메뉴 건너뛰기




Volumn 66, Issue 4, 2006, Pages 1209-1226

Moments of the inverse scattering operator of the Boltzmann equation: Theory and applications

Author keywords

Beyond the relaxation time approximation; Boltzmann equation; Inverse scattering operator; Semiconductor; Transport model

Indexed keywords

APPROXIMATION THEORY; COMPUTATION THEORY; ITERATIVE METHODS; MAGNETIC FIELDS; MATHEMATICAL OPERATORS; SEMICONDUCTOR MATERIALS;

EID: 33747192549     PISSN: 00361399     EISSN: None     Source Type: Journal    
DOI: 10.1137/050633275     Document Type: Article
Times cited : (10)

References (15)
  • 1
    • 0034450587 scopus 로고    scopus 로고
    • Extended hydrodynamical model of carrier transport in semiconductors
    • A. M. ANILE, V. ROMANO, AND G. Russo, Extended hydrodynamical model of carrier transport in semiconductors, SIAM J. Appl. Math., 61 (2000), pp. 74-101.
    • (2000) SIAM J. Appl. Math. , vol.61 , pp. 74-101
    • Anile, A.M.1    Romano, V.2    Russo, G.3
  • 2
    • 0043032847 scopus 로고    scopus 로고
    • On well-posedness of a Boltzmann-like semiconductor model
    • J. BANASIAK, On well-posedness of a Boltzmann-like semiconductor model, Math. Models Methods Appl. Sci., 13 (2003), pp. 875-892.
    • (2003) Math. Models Methods Appl. Sci. , vol.13 , pp. 875-892
    • Banasiak, J.1
  • 3
    • 0014705867 scopus 로고
    • Transport equations for electrons in two-valley semiconductors
    • K. BLøTEKJÆR, Transport equations for electrons in two-valley semiconductors, IEEE Trans. Electron Devices, ED-17 (1970), pp. 38-47.
    • (1970) IEEE Trans. Electron Devices , vol.ED-17 , pp. 38-47
    • Bløtekjær, K.1
  • 6
    • 0041073802 scopus 로고    scopus 로고
    • Using six moments of Boltzmann's transport equation for device simulation
    • T. GRASSER, H. KOSINA, M. GRITSCH, AND S. SELBERHERR, Using six moments of Boltzmann's transport equation for device simulation, J. Appl. Phys., 90 (2001), pp. 2389-2396.
    • (2001) J. Appl. Phys. , vol.90 , pp. 2389-2396
    • Grasser, T.1    Kosina, H.2    Gritsch, M.3    Selberherr, S.4
  • 7
    • 84907684995 scopus 로고    scopus 로고
    • Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure
    • Extended Abstracts, IEEE, Piscataway, NJ
    • C. JUNGEMANN, M. BARTELS, S. KEITH, AND B. MEINERZHAGEN, Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure, in Extended Abstracts of the Sixth International Workshop on Computational Electronics, IEEE, Piscataway, NJ, 1998, pp. 104-107.
    • (1998) The Sixth International Workshop on Computational Electronics , pp. 104-107
    • Jungemann, C.1    Bartels, M.2    Keith, S.3    Meinerzhagen, B.4
  • 8
    • 33746797501 scopus 로고    scopus 로고
    • Hierarchical device simulation. the Monte-Carlo perspective
    • Springer, Vienna, New York
    • C. JUNGEMANN AND B. MEINERZHAGEN, Hierarchical Device Simulation. The Monte-Carlo Perspective, Computational Microelectronics, Springer, Vienna, New York, 2003.
    • (2003) Computational Microelectronics
    • Jungemann, C.1    Meinerzhagen, B.2
  • 9
    • 0002945715 scopus 로고
    • Linear operators leaving invariant a cone in a Banach space
    • in Russian
    • M. G. KREIN AND M. A. RUTMAN, Linear operators leaving invariant a cone in a Banach space, Uspehi Matem. Nauk (N.S.), 3 (1948), pp. 3-95 (in Russian);
    • (1948) Uspehi Matem. Nauk (N.S.) , vol.3 , pp. 3-95
    • Krein, M.G.1    Rutman, M.A.2
  • 11
    • 0003406744 scopus 로고    scopus 로고
    • Introduction to solid-state theory
    • Springer, Berlin, Heidelberg, New York
    • O. MADELUNG, Introduction to Solid-State Theory, Solid-State Sciences, Springer, Berlin, Heidelberg, New York, 1996.
    • (1996) Solid-state Sciences
    • Madelung, O.1
  • 12
    • 0000782363 scopus 로고
    • Space homogeneous solutions of the Boltzmann equation describing electronphonon interactions in semiconductors
    • A. MAJORANA, Space homogeneous solutions of the Boltzmann equation describing electronphonon interactions in semiconductors, Transport Theory Statist. Phys., 20 (1991), pp. 261-279.
    • (1991) Transport Theory Statist. Phys. , vol.20 , pp. 261-279
    • Majorana, A.1
  • 13
    • 0003920388 scopus 로고    scopus 로고
    • Advanced physical models for silicon device simulation
    • Springer, Vienna, New York
    • A. SCHENK, Advanced Physical Models for Silicon Device Simulation, Computational Microelectronics, Springer, Vienna, New York, 1998.
    • (1998) Computational Microelectronics
    • Schenk, A.1
  • 14
    • 36149018649 scopus 로고
    • Diffusion of hot and cold electrons in semiconductor barriers
    • R. STRATTON, Diffusion of hot and cold electrons in semiconductor barriers, Phys. Rev. 126 (1962), pp. 2002-2014.
    • (1962) Phys. Rev. , vol.126 , pp. 2002-2014
    • Stratton, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.