First-principle computation of relaxation times in semiconductors for low and high electric fields

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 151-154

  Brugger, Simon C ^a   Schenk, Andreas ^a,b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; DIFFERENTIAL EQUATIONS; ELECTRIC FIELD EFFECTS; ELECTRONS; SEMICONDUCTOR DOPING; SILICON;

BOLTZMANN EQUATIONS; FIELD INTENSITIES; RELAXATION TIMES;

SEMICONDUCTOR MATERIALS;

EID: 33747165635     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201495     Document Type: Conference Paper

References (6)

1. T. Grasser, T. Tang, H. Kosina, and S. Selberherr, "A review of hydrodynamic and energy-transport models for semiconductor device simulation," Proc. of the IEEE, vol. 91, no. 2, pp. 251-274, 1999.
2. O. Madelung, Introduction to Solid-State Theory. ser. Solid-State Sciences. Berlin Heidelberg New York: Springer, 1996.
3. C. Jungemann and B. Meinerzhagen, Hierarchical Device Simulation. The Monte-Carlo Perspective. ser. Computational Microelectronics. Wien, New York: Springer, 2003.
4. F. Bufler, Y. Asahi, H. Yoshimura, C. Zechner, A. Schenk, and W. Fichtner, "Monte carlo simulation and measurement of nanoscale n-mosfets," IEEE Transaction on Electron Devices, vol. 50, no. 2, 2003.
5. F. Bufler, A. Schenk, and W. Fichtner, "Simplifed miodel for inelastic acoustic phonon scattering of holes in si and ge," Journal of Applied Physics, vol. 90, pp. 21626-22628, 2001
6. T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr, "Using six moments of boltzmann's transport equation for device simulation," Journal of Applied Physics, vol. 90, no. 5, pp. 2389-2396, 2001. 155-158