Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films

Integrated Ferroelectrics

Volumn 39, Issue 1-4, 2001, Pages 189-198

  Bachhofer, Harald ^a,b   Reisinger, Hans ^a   Steinlesberger, Gernot ^a   Schroeder, Herbert ^c   Nagel, Nicolas ^a   Mdcolajick, Thomas ^a   Cerva, Hans ^d   Von Philipsborn, Henning ^b   Waser, Rainer ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d SIEMENS AG   (Germany)

Author keywords

Ferroelectrics; Interfacial layer; Leakage current; SBT

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTROCHEMICAL ELECTRODES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; STRONTIUM COMPOUNDS;

INTERFACIAL LAYERS; RICHARDSON CONSTANT; STRONTIUM BISMUTH TANTALATE;

THIN FILMS;

EID: 33747189905     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108011942     Document Type: Conference Paper

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