High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1368-1370

  Ivanov, Pavel A ^a   Levinshtein, Michael E ^a   Palmour, John W ^b   Das, Mrinal K ^b   Hull, Brett A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Carrier lifetime; Junction diode; Silicon carbide

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MODULATION; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

CARRIER LIFETIME; ISOTHERMAL (PULSE) CURRENT-VOLTAGE; JUNCTION DIODES; OPEN CIRCUIT VOLTAGE DECAY (OCVD);

SILICON CARBIDE;

EID: 33747177559     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.06.018     Document Type: Article

References (12)

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