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Journal of the Korean Physical Society

Volumn 49, Issue 1, 2006, Pages 177-180

Characteristics of p-type GaN formed by two different types of Mg diffusion

(4) Chung, S J a Karunagaran, B a Senthilkumar, M a Suh, E K a

a Chonbuk National University (South Korea)

Author keywords

Mg diffusion; MOCVD; n type GaN; p type GaN; Photocurrent; Photoluminescence

Indexed keywords

EID: 33747058512 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.