Nitrogen incorporation in a homoepitaxial diamond thin film

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 554-558

  Watanabe, H ^a,b   Kume, H ^a,b,c   Mizuochi, N ^a,b,d   Yamasaki, S ^a,b   Kanno, S ^a,b   Okushi, H ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR ENVIRONMENTAL STUDIES   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Cathodoluminescence; Diamond growth; Homoepitaxial diamond thin film; Nitrogen

Indexed keywords

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; EXCITONS; NITROGEN; OPTICAL PROPERTIES;

DIAMOND GROWTH; EXCITONIC EMISSION; HOMOEPITAXIAL DIAMOND THIN FILMS; NITROGEN-VACANCY COMPLEX CENTER (H3 CENTER);

DIAMOND FILMS;

EID: 33746941777     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.11.037     Document Type: Article

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