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Volumn 33, Issue 6, 2006, Pages 832-836

a-axis oriented Bi4Ti3O12 thin films deposited on Si(111) by femtosecond laser ablation

Author keywords

Bi4Ti3O12; Femtosecond; Ferroelectric film; Pulsed laser deposition; Thin film

Indexed keywords

COERCIVE FORCE; CRYSTALLINE MATERIALS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER ABLATION; MORPHOLOGY; PIEZOELECTRIC DEVICES; POLARIZATION; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; QUARTZ; REFLECTION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; X RAY DIFFRACTION ANALYSIS;

EID: 33746814031     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (15)
  • 1
    • 0037135775 scopus 로고    scopus 로고
    • Layered perovskites with giant spontaneous polarization for nonvolatile memories
    • Uong Chon, Hyun M. Jang, M. G. Kim et al.. Layered perovskites with giant spontaneous polarization for nonvolatile memories [J]. Phys. Rev. Lett., 2002, 89(8): 87601-1-87601-4
    • (2002) Phys. Rev. Lett. , vol.89 , Issue.8
    • Chon, U.1    Jang, H.M.2    Kim, M.G.3
  • 3
    • 12444305365 scopus 로고    scopus 로고
    • 12 ceramics with grain orientation
    • 12 ceramics with grain orientation [J]. J. Chin. Ceramic Society, 2004, 32(11): 1330-1334
    • (2004) J. Chin. Ceramic Society , vol.32 , Issue.11 , pp. 1330-1334
    • Mao, X.1    Chen, X.2
  • 4
    • 0012609036 scopus 로고
    • 12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor deposition
    • 12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1993, 73(11): 7963-7965
    • (1993) J. Appl. Phys. , vol.73 , Issue.11 , pp. 7963-7965
    • Wang, H.1    Fu, L.W.2    Shang, S.X.3
  • 5
    • 0000649841 scopus 로고
    • Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition
    • Jie Si, Seshu B. Desu. Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1993, 73(11): 7910-7913
    • (1993) J. Appl. Phys. , vol.73 , Issue.11 , pp. 7910-7913
    • Si, J.1    Desu, S.B.2
  • 7
    • 0000730485 scopus 로고    scopus 로고
    • 12 thin films by sol-gel process on platinum coated silicon
    • 12 thin films by sol-gel process on platinum coated silicon [J]. Appl. Phys. Lett., 1996, 68(9): 1209-1210
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.9 , pp. 1209-1210
    • Gu, H.1    Kuang, A.2    Wang, S.3
  • 8
    • 0030413315 scopus 로고    scopus 로고
    • 9 thin films deposited by the radio-frequency magnetron sputtering
    • 9 thin films deposited by the radio-frequency magnetron sputtering [J]. Appl. Phys. Lett., 1996, 69(24): 3839-3841
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.24 , pp. 3839-3841
    • Song, T.K.1    Lee, J.-K.2    Jung, H.J.3
  • 9
    • 4944255092 scopus 로고    scopus 로고
    • Investigation of structural and ferroelectric properties of pulsed-laser-ablated epitaxial Nd-doped bismuth titanate films
    • A. Garg, A. Snedden, P. Lightfood et al.. Investigation of structural and ferroelectric properties of pulsed-laser-ablated epitaxial Nd-doped bismuth titanate films [J]. J. Appl. Phys., 2004, 96(6): 3408-3412
    • (2004) J. Appl. Phys. , vol.96 , Issue.6 , pp. 3408-3412
    • Garg, A.1    Snedden, A.2    Lightfood, P.3
  • 10
    • 36449002484 scopus 로고
    • Electrical characteristics of excimer laser ablated bismuth titanate films on silicon
    • N. Maffei, S. B. Krupanidhi. Electrical characteristics of excimer laser ablated bismuth titanate films on silicon [J]. J. Appl. Phys., 1992, 72(8): 3617-3621
    • (1992) J. Appl. Phys. , vol.72 , Issue.8 , pp. 3617-3621
    • Maffei, N.1    Krupanidhi, S.B.2
  • 12
    • 2942644288 scopus 로고    scopus 로고
    • Pulsed laser two-beam deposition of Mg-doped GaN thin films
    • Tong Xinglin, Zheng Qiguang, Hu Shaoliu et al.. Pulsed laser two-beam deposition of Mg-doped GaN thin films [J]. Chinese J. Lasers, 2004, 31(3): 332-336
    • (2004) Chinese J. Lasers , vol.31 , Issue.3 , pp. 332-336
    • Tong, X.1    Zheng, Q.2    Hu, S.3
  • 13
    • 0000574167 scopus 로고    scopus 로고
    • Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition
    • E. Millon, O. Albert, J. C. Loulergue et al.. Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition [J]. J. Appl. Phys., 2000, 88(11): 6937-6939
    • (2000) J. Appl. Phys. , vol.88 , Issue.1 , pp. 6937-6939
    • Millon, E.1    Albert, O.2    Loulergue, J.C.3
  • 14
    • 30944462934 scopus 로고    scopus 로고
    • 2 thin films prepared on Si wafer by femtosecond laser ablation and its photoluminescence at room temperature
    • 2 thin films prepared on Si wafer by femtosecond laser ablation and its photoluminescence at room temperature [J]. Phys. Lett. A, 2006, 350(3-4): 293-296
    • (2006) Phys. Lett. A , vol.350 , Issue.3-4 , pp. 293-296
    • Lu, P.1    Zhou, Y.2    Zheng, Q.3
  • 15
    • 0036470763 scopus 로고    scopus 로고
    • 2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition
    • 2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition [J]. J. Appl. Phys., 2002, 91(3): 1060-1065
    • (2002) J. Appl. Phys. , vol.91 , Issue.3 , pp. 1060-1065
    • Dominguez, J.E.1    Pan, X.Q.2    Fu, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.