Characterization of Ga1-xMnxAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy

Philosophical Magazine Letters

Volumn 86, Issue 6, 2006, Pages 395-401

  Fay, M W ^a   Han, Y ^a   Brown, P D ^a   Edmonds, K W ^a   Wang, K ^a   Gallagher, B L ^a   Campion, R P ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC ANISOTROPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITIONAL FLUCTUATION; CONTRAST FEATURES; LAYER GROWTH; SURFACTANT LAYER;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33746594128     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/09500830600847087     Document Type: Article

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