The improved electrical contact between a metal and porous silicon by deposition using a supercritical fluid

Nanotechnology

Volumn 17, Issue 12, 2006, Pages 2968-2971

  Lin, Jia Chuan ^a   Tsai, Wei Chih ^b   Lee, Wen Sheng ^c  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; DEPOSITION; ELECTRIC POTENTIAL; MORPHOLOGY; NANOSTRUCTURED MATERIALS; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SUPERCRITICAL FLUIDS; SURFACE ROUGHNESS;

CONTACT RESISTANCE; NONLINEAR CURRENT-VOLTAGE CHARACTERISTIC; SILVER PRECURSOR;

ELECTRIC CONTACTS;

EID: 33746584472     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/12/024     Document Type: Article

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