Radiative recombination during acoustically induced transport in GaAs quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2029-2035

  Alsina, F ^a,b   Stotz, J A H ^a   Hey, R ^a   Santos, P V ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ELECTRON TRANSITIONS; ELECTRON TRAPS; HOLE TRAPS; PHOTOLUMINESCENCE; PIEZOELECTRICITY; RADIATION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

ELECTRON CAPTURING CENTERS; PHOTOLUMINESCENCE SPECTROSCOPY; RADIATIVE RECOMBINATION; TRAPPING CENTERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746582409     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2214715     Document Type: Article

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