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Volumn 80, Issue 13, 2002, Pages 2320-2322
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Radiative recombination during ambipolar carrier transport by surface acoustic waves in GaAs quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
AMBIPOLAR;
CHARGED DEFECTS;
GAAS QUANTUM WELLS;
PHOTOGENERATED ELECTRONS;
PL INTENSITY;
PROPAGATION PATHS;
RADIATIVE RECOMBINATION;
SURFACE ACOUSTIC WAVES;
ACOUSTIC SURFACE WAVE DEVICES;
ACOUSTIC WAVES;
ACOUSTICS;
ACOUSTOELECTRIC EFFECTS;
GALLIUM ARSENIDE;
QUANTUM CHEMISTRY;
SEMICONDUCTING GALLIUM;
SURFACE DEFECTS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 79956057573
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1463706 Document Type: Article |
Times cited : (9)
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References (11)
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