Electromigration in eutectic tin-lead solder lines at the device temperature

Proceedings of the International Symposium and Exhibition on Advanced Packaging Materials Processes, Properties and Interfaces

Volumn 2005, Issue , 2005, Pages 160-163

  Agarwal, Rajat ^a   Tu, K N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC EQUIPMENT; GRAIN BOUNDARIES; LEAD; SILICON WAFERS; SOLDERED JOINTS; TIN;

DEVICE TEMPERATURE; DIFFUSING SPECIES; EUTECTIC SNPB; TEST SAMPLES;

ELECTROMIGRATION;

EID: 33746558051     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAPM.2005.1432069     Document Type: Conference Paper

References (6)

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2. Q.T. Huynh, C.Y. Liu, C. Chen, and K.N. Tu, "Electromigration in eutectic SnPb solder lines," J. Appl. Phys., vol. 89, pp. 4332-4335, April 2001
3. D. Gupta, K. Vieregge, and W. Gust, "Interface diffusion in eutectic SnPb solder," Acta mater, vol. 47, pp. 5-12, October 1998.
4. H. Gan, W.J. Choi, G. Xu, and K.N. Tu, "Electromigration in flip chip solder joints and solder lines," J. of Materials, vol. 54, pp. 34-37, June 2002.
5. T.Y. Lee, S.M. Kuo, K.N. Tu, and D.R. Frear, "Electromigration of eutectic SnPb solder interconnects for flip chip technology," J. Appl. Phys., vol. 89, pp. 3189-3194, March 2001.
6. H. Ye, C. Basaran, and D.C Hopkins, "Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under electric current stressing," Intl. J. of Solid and Structures, vol. 41, pp. 2743-2755, January 2004.