Structural and magnetic properties of (Ga, Mn) As/AIAs multiple quantum wells grown by low-temperature molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1734-1738

  Kolovos Vellianitis, D ^a   Herrmann, C ^a   Trampert, A ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FERROMAGNETISM; LOW TEMPERATURE OPERATIONS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FERROMAGNETIC BEHAVIOR; LOW-TEMPERATURE MOLECULAR BEAM EPITAXY; STRUCTURAL PARAMETERS; STRUCTURAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746507284     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2209993     Document Type: Article

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