Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 61-62

  Kumar, V ^a   Chen, G ^a   Guo, S ^b   Peres, B ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

E-BEAM LITHOGRAPHY; MATERIAL GROWTH; MESA ISOLATION; POWER DENSITY;

CURRENT DENSITY; GALLIUM NITRIDE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33751328800     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553055     Document Type: Conference Paper

References (2)

1. Y.-F. Wu et al., "30 W/mm GaN HEMTs by Field Plate Optimization", Electron Dev. Lett., vol. 25, p. 117 (2004)
2. R. Thompson et al., "Performance of the AlGaN HEMT structure With a Gate Extension" IEEE Trans. Electron Dev., vol. 51, p. 292 (2004)