A 150 to 220 GHz balanced doubler MMIC Using a 50 nm metamorphic HEMT technology

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 565-568

  Schworer C ^a   Roca, Y Campos ^b   Leuther, A ^a   Tessmann, A ^a   Seelmann Eggebert, M ^a   Massler, H ^a   Schlechtweg, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF EXTREMADURA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; MIXER CIRCUITS; PRODUCT DESIGN;

INPUT POWER; LO SIGNALS; MARCHAND BALUN; METAMORPHIC TECHNOLOGY;

FREQUENCY DOUBLERS;

EID: 33746402839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P. Siegel, "Terahertz Technology", IEEE Transactions on Microwave Theory and Techniques, vol.50, no. 3, March 2002.
2. nd Edition, 2003.
3. V. Radisic, M. Micovic, M. Hu, P. Janke, C. Ngo, L. Nguyen, L. Samoska and M. Morgan, "164-GHz MMIC HEMT Doubler," IEEE Microwave and Wireles Components Lett., vol. 11, no. 6, pp. 241-243, 2001.
4. A. Leuther, A. Tessmann, M. Dammann, W. Reinert, M. Schlechtweg, M. Mikulla, M. Walther, G Weimann, "70 nm Low Noise Metamorphic HEMT Technology on 4 Inch GaAs Wafers", Indium Phosphide and Related Materials Conference, IPRM, May2003, pp. 215-218.
5. th GAAS Symposium, Amsterdam, October 2004, pp. 91-94.
6. A. R. Barnes, P. Munday, R. Jennings and M.T. Moore. "A Comparison of W-Band Monolithic Resistive Mixer Architectures", IEEE MTTS 2002, pp. 1876-1870.