A comparison of W-band monolithic resistive mixer architectures

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1867-1870

  Barnes, A R ^a   Munday, P ^a   Jennings, R ^a   Moore, M T ^a  

^a QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC LOSSES; ELECTRIC NETWORK TOPOLOGY; GATES (TRANSISTOR); HARMONIC ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

CONVERSION LOSS; HARMONIC BALANCE ANALYSIS; LOCAL OSCILLATOR DRIVE LEVEL; MONOLITHIC RESISTIVE MIXERS;

MIXER CIRCUITS;

EID: 0036068441     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Device considerations and modelling for the design of an InP based MODFET mm-wave resistive mixer with superior conversion efficiency
2. A GaAs MESFET mixer with very low intermodulation