In-situ monitoring of AIN crystal growth on 6H-SiC by the use of a pyrometer

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1565-1568

  Suzuki, T ^a   Inushima, T ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

AlN; In situ monitoring; MOCVD; Pyrometer; SiC

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIAMOND FILMS; SILICON CARBIDE; SURFACE ROUGHNESS; SURFACES; THERMOCOUPLES;

CARRIER GAS; CRYSTALLINE QUALITY; LATTICE MISMATCH;

PYROMETERS;

EID: 8644219756     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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