HVPE growth of high quality GaN layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1471-1474

  Brückner, Peter ^a   Habel, Frank ^b   Scholz, Ferdinand ^a  

^a UNIVERSITY OF ULM   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN; MISCUT; MISCUT TEMPLATES; PYRAMIDAL STRUCTURES; 68.55.JK; 81.05.EA; 81.15.KK; FLAT SURFACES; MIS-ORIENTATION; MISORIENTATION ANGLE; POLISHING STEPS;

MORPHOLOGY; POLISHING; SURFACE ROUGHNESS; SURFACES; VAPOR PHASE EPITAXY; CONDENSED MATTER PHYSICS; PHYSICS;

SEMICONDUCTING GALLIUM COMPOUNDS; EPITAXIAL GROWTH;

EID: 33746382247     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565160     Document Type: Conference Paper

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