Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1927-1930

  Martin, R W ^a   Rading, D ^b   Kersting, R ^c   Tallarek, E ^c   Nogales, E ^a   Amabile, D ^a   Wang, K ^a   Katchkanov, V ^a   Trager Cowan, C ^a   O'Donnell, K P ^a   Watson, I M ^a   Matias, V ^d   Vantomme, A ^d   Lorenz, K ^e   Alves, E ^e  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c TASCON GMBH   (Germany)

^d KU LEUVEN   (Belgium)

^e INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ALINN/GAN BILAYERS; PHOTOLUMINESCENCE EXCITATION; TIME-OF-FLIGHT; 68.49.SF; 68.55.LN; 68.65.AC; 78.60.HK; CATHODOLUMINESCENCE SPECTRA; INCIDENT ELECTRONS; PHOTO-LUMINESCENCE EXCITATION; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

CATHODOLUMINESCENCE; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; ION IMPLANTATION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; GALLIUM NITRIDE;

ALUMINUM COMPOUNDS; IONS;

EID: 33746364178     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565411     Document Type: Conference Paper

References (8)

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6. K. Lorenz et al., Appl. Phys. Lett. 85, 2712 (2004).
7. K. Wang et al., Appl. Phys. Lett. 87, 112107 (2005).
8. J. F. Ziegler and J. P. Biersack, www.SRIM.org