Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1548-1551

  Mansurov, V G ^a   Galitsyn, Yu G ^a   Nikitin, A Yu ^a   Zhuravlev, K S ^a   Vennegues, Ph ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3D NUCLEATION RATE; ALN MATRIX; NUCLEUS SIZE; RATE EQUATION ANALYSIS; 2D AND 3D NUCLEATIONS; 61.14.HG; 68.55.AC; 81.15.HI; CRITICAL NUCLEUS SIZE; GROWTH MECHANISMS; MULTILAYER STRUCTURES; SUBSTRATE TEMPERATURE;

ACTIVATION ENERGY; AMMONIA; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTION KINETICS; SEMICONDUCTOR GROWTH; THREE DIMENSIONAL COMPUTER GRAPHICS;

SEMICONDUCTOR QUANTUM DOTS; GALLIUM NITRIDE;

EID: 33746361196     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565203     Document Type: Conference Paper

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