Growth and morphology of MOVPE grown InGaN/GaN islands

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1557-1560

  Gangopadhyay, S ^a   Schmidt, Th ^a   Einfeldt, S ^a   Yamaguchi, T ^a   Hommel, D ^a   Falta, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; INGAN/GAN ISLANDS; ISLAND DENSITY; SCANNING PROBE MICROSCOPY; 68.35.BS; 68.37.EF; 68.55.A; 68.65.HB; 81.05.EA; 81.15.GH;

METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; NUCLEATION; SCANNING; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL DIFFUSION; GROWTH TEMPERATURE; ORGANOMETALLICS;

GALLIUM NITRIDE; SCANNING PROBE MICROSCOPY;

EID: 33746333284     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565438     Document Type: Conference Paper

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