An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2261-2264

  Marso, M ^a   Fox, A ^a   Heidelberger, G ^a   Bernat J ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYER; MSM DIODES; OPTOELECTRONIC PROPERTIES; SPECTRAL RESPONSIVITY; 85.30.TV; 85.60.BT; 85.60.GZ; DEVICE FABRICATIONS; ETCHING TECHNIQUE; PROCESSING STEPS;

CRYSTAL GROWTH; ELECTRON GAS; ETCHING; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; BIAS VOLTAGE; PHOTODETECTORS; PHOTONS;

PHOTODETECTORS; GALLIUM NITRIDE;

EID: 33746331042     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565127     Document Type: Conference Paper

References (7)

1. M. Marso, M. Horstmann, H. Hardtdegen, P. Kordoš, and H. Lüth, Solid-State Electron. 41, 25 (1997).
2. M. Marso, M. Horstmann, K. Schimpf, J. Muttersbach, H. Hardtdegen, G. Jacob, and P. Kordoš, Proc. 9th Int. Conf. Indium Phosphide and Related Materials, Hyannis, Massachusetts, USA, 1997, pp. 494-497.
3. M. Marso, M. Wolter, P. Javorka, A. Fox, and P. Kordoš, Electron. Lett. 37, 1476 (2001).
4. M. Marso, J. Bernát, M. Wolter, P. Javorka, A. Fox, and P. Kordoš, Proc. 4th Intern. Conf. Advanced Semicond. Dev. & Microsystems, 2002, pp. 295-298; ISBN: 0-7803-7276-X.
5. O. Ambacher et al., MRS Internet J. Nitride Semicond. Res. 2, 22 (1997).
6. J.F. Muth et al., MRS Internet J. Nitride Semicond. Res. 4S1, G5.2 (1999).
7. J. Bernát, M. Wolter, A. Fox, M. Marso, J. Flynn, G. Brandes, and P. Kordoš, Electron. Lett. 40, 78 (2004).