Recrystallization behavior in chiral sculptured thin films from silicon

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Schubert, E ^a   Fahlteich, J ^a   Rauschenbach, B ^a   Schubert, M ^b   Lorenz, M ^b   Grundmann, M ^b   Wagner, G ^b  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; RAMAN SPECTROSCOPY; SILICON; THERMAL EFFECTS;

CHIRAL STRUCTURE GEOMETRY; RECRYSTALLIZATION BEHAVIOR; TEMPERATURE RANGE;

THIN FILMS;

EID: 33746278083     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207728     Document Type: Article

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