Fabrication of MnAs microstructures on GaAs (0 0 1) substrates and their electrical properties

Journal of Solid State Chemistry

Volumn 179, Issue 8, 2006, Pages 2271-2280

  Takagaki, Y ^a   Wiebicke, E ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Manganese arsenide; Microstructure; Resistivity; Wet chemical etching

Indexed keywords

ARGON; CRACK INITIATION; DRY ETCHING; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FABRICATION; GALLIUM COMPOUNDS; IONS; MICROSTRUCTURE; THERMAL EFFECTS;

MANGANESE ARSENIDE; NONMAGNETIC PHASES; SUBMICROMETER; WET CHEMICAL ETCHING;

MANGANESE COMPOUNDS;

EID: 33746270227     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2006.02.008     Document Type: Article

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