Strain-mediated phase coexistence in heteroepitaxial films

Physical Review Letters

Volumn 85, Issue 2, 2000, Pages 341-344

  Kaganer, V M ^a   Jenichen, B ^a   Schippan, F ^a   Braun, W ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; EPITAXIAL GROWTH; HETEROJUNCTIONS; HYSTERESIS; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; STRAIN; TEMPERATURE; THERMAL CYCLING;

GIBBS PHASE RULE; HETEROEPITAXIAL FILMS;

PHASE EQUILIBRIA;

EID: 12944286614     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.341     Document Type: Article

References (24)

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