Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2895-2897

  Takagaki, Y ^a   Wiebicke, E ^a   Hesjedal, T ^a   Kostial, H ^a   Herrmann, G ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ARSENIC COMPOUNDS; CRACK INITIATION; DRY ETCHING; GALLIUM COMPOUNDS; HETEROJUNCTIONS; NANOTECHNOLOGY; SUBSTRATES;

NANOISLANDS;

MANGANESE COMPOUNDS;

EID: 0142198453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611288     Document Type: Article

References (8)

1. For a review see, for example, M. Tanaka, Semicond. Sci. Technol. 17, 327 (2002).
2. V. M. Kaganer, B. Jenichen, F. Schippan, W. Braun, L. Däweritz, and K. H. Ploog, Phys. Rev. Lett. 85, 341 (2000).
3. L. Däweritz, F. Schippan, A. Trampert, M. Kästner, G. Behme, Z. M. Wang, M. Moreno, P. Schützendübe, and K. H. Ploog, J. Cryst. Growth 227/228, 834 (2001).
4. Y. Takagaki, E. Wiebicke, M. Ramsteiner, L. Däweritz, and K. H. Ploog, Appl. Phys. A: Mater. Sci. Process. A76, 837 (2003).
5. T. Plake, M. Ramsteiner, V. M. Kaganer, B. Jenichen, M. Kästner, L. Däweritz, and K. H. Ploog, Appl. Phys. Lett. 80, 2523 (2002).
6. F. Schippan, G. Behme, L. Däweritz, K. H. Ploog, B. Dennis, K.-U. Neumann, and K. R. A. Ziebeck, J. Appl. Phys. 88, 2766 (2000).
7. P. R. Krauss and S. Y. Chou, Appl. Phys. Lett. 71, 3174 (1997).
8. M. Kästner, C. Herrmann, L. Däweritz, and K. H. Ploog, J. Appl. Phys. 92, 5711 (2002).