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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 8, 2005, Pages 1647-1650

Fabrication and characterization of Zn-doped CdTe nanowires

(5) Zhou, S M a Zhang, X H a Meng, X M a Wu, S K a Lee, S T a,b

a TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY (China)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; FABRICATION; MICROMETERS; SEMICONDUCTING CADMIUM TELLURIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

GROWTH MECHANISM; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 27244434758 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-005-3334-x Document Type: Article

Times cited : (17)

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