The effects of hydrogen on the electronic properties of silicon

Superlattices and Microstructures

Volumn 37, Issue 2, 2005, Pages 115-126

  Louhibi, S ^a   Sekkal, N ^a,b   Benkhettou, N ^b   Chabane Sari, N E ^c  

^a Ecl Normale Sup l'Enseignement T ^*  (Algeria)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^c UNIVERSITY OF TLEMCEN   (Algeria)

Author keywords

Band structure; Perturbative pseudopotential method; Porous silicon; Quantum wire

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; HYDROGEN; PERTURBATION TECHNIQUES; SEMICONDUCTOR QUANTUM WIRES;

BAND STRUCTURES; DANGLING BONDS; PERTURBATIVE PSEUDOPOTENTIAL METHOD (PPM);

SEMICONDUCTING SILICON;

EID: 10844239785     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.047     Document Type: Article

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