Theoretical study of band edges in porous silicon

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3569-3572

  Yorikawa, H ^a   Sato, T ^a   Muramatsu, S ^a  

^a UTSUNOMIYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; PORE SIZE; POROSITY;

BAND EDGES; VALENCE BANDS;

POROUS SILICON;

EID: 1942424926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650897     Document Type: Article

References (20)

1. For a review, see, for example, A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997); D. J. Lockwood in Light Emission in Silicon: From Physics to Device, edited by D. J. Lockwood (Academic Press, New York, 1998); Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997).
2. For a review, see, for example, A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997); D. J. Lockwood in Light Emission in Silicon: From Physics to Device, edited by D. J. Lockwood (Academic Press, New York, 1998); Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997).
3. For a review, see, for example, A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997); D. J. Lockwood in Light Emission in Silicon: From Physics to Device, edited by D. J. Lockwood (Academic Press, New York, 1998); Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997).
4. T. van Buuren, T. Tiedje, J. R. Dahn, and B. M. Way, Appl. Phys. Lett. 63, 2911 (1993).
5. S. Eisebitt, J. Lüning, J.-E. Rubensson, T. van Buuren, S. N. Patitsas, T. Tiedje, M. Berger, R. Arens-Fischer, S. Frohnhofff, and W. Eberhardt, Solid State Commun. 97, 549 (1996).
6. S. C. Bayliss, in Structural and Optical Properties of Porous Silicon Nanostructures, edited by G. Amato, C. Delerue, and H.-J. von Bardeleben (Gordon and Breach Science Publishers, The Netherlands, 1997), p. 333.
7. T. Monguchi, H. Fujioka, K. Ono, Y. Baba, and M. Oshima, J. Electrochem. Soc. 147, 602 (2000).
8. G. Dalba, N. Daldosson, P. Fornasini, M. Grimaldi, and R. Grisenti, Phys. Rev. B 62, 9911 (2000).
9. Shang Yuan Ren and John D. Dow, Phys. Rev. B 45, 6492 (1992).
10. M. Cruz, C. Wang, and M. R. Beltrán, Phys. Rev. B 53, 3827 (1996).
11. C. Delerue, M. Lannoo, and G. Allan, Phys. Status Solidi B 227, 115 (2001); C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11 024 (1993).
12. C. Delerue, M. Lannoo, and G. Allan, Phys. Status Solidi B 227, 115 (2001); C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11 024 (1993).
13. J. Kōga, K. Nishino, T. Yamaguchi, and F. Yonezawa, J. Phys. Soc. Jpn. 70, 3143 (2001).
14. E. Vázquez, J. Tagüeña-Martinez, L. E. Sansores, and C. Wang, J. Appl. Phys. 91, 3085 (2002).
15. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
16. H. Yorikawa, H. Uchida, and S. Muramatsu, J. Appl. Phys. 79, 3619 (1996).
17. H. Kimura, S. Imanaga, Y. Hayafuji, and H. Adachi, J. Phys. Soc. Jpn. 62, 2663 (1993).
18. W. A. Harrison, Electronic Structure and the Properties of Solid (Freeman, New York, 1980).
19. G. D. Sanders and Y. C. Chang, Phys. Rev. B 45, 9202 (1992).
20. Jean-Marc Jancu, Reinhard Scholz, Fabio Beltram, and Franco Bassani, Phys. Rev. B 57, 6493 (1998).