Influence of structural relaxation on the optical and electronic properties of embedded Ge nanocrystals

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 961-964

  Weissker, H Ch ^a   Furthmuller J ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Density functional calculations; Germanium; Silicon; Single crystal surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface relaxation and reconstruction

Indexed keywords

APPROXIMATION THEORY; DENSITY (SPECIFIC GRAVITY); ELECTRONIC PROPERTIES; LATTICE CONSTANTS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PROBABILITY DENSITY FUNCTION; SILICON; SINGLE CRYSTALS;

DENSITY FUNCTIONAL CALCULATIONS; SINGLE CRYSTAL SURFACES; SURFACE ELECTRONIC PHENOMENA; SURFACE RELAXATION AND RECONSTRUCTION;

GERMANIUM;

EID: 4544376180     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.109     Document Type: Article

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