Magnetoresistance in silicon-based semiconductor-metal hybrid structures

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Troup, A S ^a   Hasko, D G ^a   Wunderlich, J ^b   Williams, D A ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; MAGNETORESISTANCE; METALLIC COMPOUNDS; SILICON;

BALLISTIC REGIME; METALLIC SUICIDE; SEMICONDUCTOR METAL HYBRID (SMH) STRUCTURES; SILICON SYSTEMS;

SEMICONDUCTOR DEVICES;

EID: 33746081265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221409     Document Type: Article

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