Enhanced sensitivity due to current redistribution in the Hall effect of semiconductor-metal hybrid structures

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Holz, Matthias ^a,b   Kronenwerth, Oliver ^a   Grundler, Dirk ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; HALL EFFECT; MAGNETORESISTANCE; TENSORS;

CURRENT SENSITIVITY; DRUDE CONDUCTIVITY; EXTRAORIDINARY MAGNETORESISTANCE (EMR); OHM'S LAW;

SEMICONDUCTOR MATERIALS;

EID: 17044387358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862326     Document Type: Article

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