Effect of the interface resistance on the extraordinary magnetoresistance of semiconductor/metal hybrid structures

Journal of Superconductivity and Novel Magnetism

Volumn 16, Issue 1, 2003, Pages 195-199

  Moller C H ^a   Grundler, D ^a   Kronenwerth, O ^a   Heyn, C ^a   Heitmann, D ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Cleaved edge overgrowth; Extraordinary magnetoresistance; Interface resistance; Semiconductor (2DES) metal hybrid structure

Indexed keywords

DATA REDUCTION; ELECTRONS; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MICROSTRUCTURE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CLEAVED-EDGE OVERGROWTH; EXTRAORDINARY MAGNETORESISTANCE EFFECT (EMR); INTERFACE RESISTANCE; METAL HYBRID STRUTURES;

MAGNETIC SEMICONDUCTORS;

EID: 0242417792     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: None     Document Type: Article

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