Interface and crystal structures of lanthanum substituted bismuth titanate thin films grown on Si for metal ferroelectric semiconductor structure

Integrated Ferroelectrics

Volumn 72, Issue , 2005, Pages 61-70

  Kang, Sang Woo ^a   Song, Moon Kyun ^a   Rhee, Shi Woo ^a   Suh, Ju Hyung ^a   Park, Chan Gyung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

BLT; Crystal sturcture; DLI MOCVD; Electrical properties; MFS

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TITANATE MINERALS;

ANNEALING TEMPERATURES; BI 3.2 LA 0.8 TI 3 O 12 (BLT) THIN FILMS; DLI-MOCVD; MFS;

FERROELECTRIC MATERIALS;

EID: 33746077708     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580500312917     Document Type: Article

References (14)

1. S. S. Eaton, D. B. Buterr, M. Parris, D. Wilson, and H. McNeillie, Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf., New York 130 (1998).
2. L. Miller and P. J. McWhorter, J. Appl. Phys. 72, 5999 (1992).
3. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices ED-10, 338 (1963).
4. T. Kijima, Y. Fujisaki, and H. Ishiwara, Jpn. J. Appl. Phys. 40, 2977 (2001).
5. J. Lee, J. Pak, K. Nam, J. Kim, E. Ko, and G. Park, Ceramics International 30, 1557 (2004).
6. T. Choi, Y. Kim, and J. Lee, J. Kor. Phys. Soc. 40, 188 (2002).
7. Y. Hou, X. Hong, H. Wang, M. Wang, and S. X. Shang, Appl. Phys. Lett. 78, 1733 (2001).
8. S. W. Kang and S. W. Rhee, J. Vac. Sci. Technol A 21, 340 (2003).
9. U. Chon, G. C. Yi, and H. M. Jang, Appl. Phys. Lett. 78, 658 (2001).
10. F. K. Lotering, J. Inorg. Nucl. Chem. 9, 113 (1959).
11. A. Kingon, Nature 401, 658 (1999).
12. J. F. Roeder, B. C. Hendrix, F. Hintermaier, D. A. Desrochers, T. H. Baum, G. Bhandari, M. Chappuis, P. C. V. Buskirk, C. Dehm, E. Fritsch, N. Nagel, H. Wendt, H. Cerva, W. Honlein, and C. Mazure, J. Eur. Ceram. Soc. 19, 143 (1999).
13. A. Garg, A. Snedden, P. Lightfoot, J. F. Scott, X. Hu, and Z. H. Barber, J. Appl. Phys. 96, 3408 (2004).
14. H. Ishiwara, FED Journal 11, 27 (2000).