Effect of a SiO 2 buffer layer on the characteristics of ln 2O 3-ZnO-SnO 2 films deposited on PET substrates

Journal of the Korean Physical Society

Volumn 48, Issue 6, 2006, Pages 1579-1582

  Woo, B J ^a   Hong, J S ^a   Kim, S T ^a   Kim, H M ^a   Park, S H ^a   Kim, J J ^a   Ahn, J S ^b  

^a Catholic University of Daegu   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Electrical stability; In 2 ZnO SnO 3 (IZTO); PET substrate; Rf magnetron sputtering; SiO 2 buffer layer; Transparent conducting oxide film

Indexed keywords

EID: 33746066727     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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