Effects of oxygen concentration on characteristics of RF-sputtered In2O3-ZnO thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1429-1430

  Park, Seoung Hwan ^a   Kim, Hwa Min ^a   Rhee, Byung Roh ^a   Ko, Eun Young ^a   Shon, Sang Ho ^b  

^a Catholic University of Daegu   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

In2O3; Sputtering; Thin film; ZnO

Indexed keywords

ARGON; ELECTRIC CONDUCTIVITY; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTER DEPOSITION;

OXYGEN CONCENTRATION;

THIN FILMS;

EID: 0035270478     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1429     Document Type: Article

References (8)