Growth of silicon carbide bulk crystals by physical vapor transport method and modeling efforts in the process optimization

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 197-200

  Chen, Qi Sheng ^a,c   Lu, Jing ^a   Zhang, Zi Bing ^a   Wei, Guo Dan ^b   Prasad, Vish ^c  

^a INSTITUTE OF MECHANICS   (China)

^b TSINGHUA UNIVERSITY   (China)

^c Florida International University   (United States)

Author keywords

A1. Growth models; A1. X ray diffraction; A2. Growth from vapor; A2. Single crystal growth; B1. Silicon carbide

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; INDUCTION HEATING; PHYSICAL VAPOR DEPOSITION; POSITIVE TEMPERATURE COEFFICIENT; RAMAN SCATTERING; X RAY DIFFRACTION;

6H-SIC CRYSTALS; GROWTH FROM VAPOR; GROWTH MODELS; SINGLE CRYSTAL GROWTH;

SILICON CARBIDE;

EID: 33745936349     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.008     Document Type: Article

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