Deposition and in-situ characterization of ultra-thin films

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 17-22

  Voborný, Stanislav ^a   Kolíbal, Miroslav ^a   Mach, Jindřich ^a   Čechal, Jan ^a   Bábor, Petr ^a   Průša, Stanislav ^a   Spousta, Jiří ^a   Šikola, Tomáš ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Direct ion beam deposition; GaN; Ultra thin films; X Ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL BONDS; FILM GROWTH; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

DIRECT ION BEAM DEPOSITION; FILM THICKNESS; INCIDENCE ANGLE;

ULTRATHIN FILMS;

EID: 2942622356     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.076     Document Type: Conference Paper

References (6)

1. Yuwono B., Schloesser T., Gschwardtner A., Innertsberger G., Grassi A., Olbrich A., Krautschneider W.H. Microelectron. Eng. 48:(1-4):1999;51.
2. Marton D. Film deposition from low-energy ion beams. Rabalais J.W. Low Energy Ion-Surface Interactions. 1994;511 John Wiley and Sons, Chichester. ISBN 0 471 93891 2.
3. Lau W.M., Feng X., Bello I., Sant S., Foo K.K., Lawson R.P.W. Nucl. Instrum Methods Phys. Res. B. 59-60:1991;316.
4. Swartzentruber B.S., Mo Y.W., Webb M.B., Lagally M.G. J. Vac. Sci. Technol. A. 7:(4):1989;2901.
5. M. Mohai, http://www.chemres.hu/AKKL.
6. M. Kolíbal, S. Průša, P. Bábor, T. Šikola, Surf. Sci., in print.