Fabrication of actinomorphic GaN nanowires by sputtering and ammoniating progress

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 298-301

  Tian, Deheng ^a   Xue, Chengshan ^a   Zhuang, Huizhao ^a   Zhang, Xiaokai ^a   Wu, Yuxin ^a   He, Jianting ^a   Liu, Yi'an ^a   Wang, Fuxue ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

A1. Actinomorphic nanowires; A3. Magnetic sputtering; B2. Gallium nitride

Indexed keywords

AMMONIA; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ACTINOMORPHIC NANOWIRES; GAN NANOWIRES; HEXAGONAL GAN; WURTZITE STRUCTURE;

GALLIUM NITRIDE;

EID: 33745870461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.013     Document Type: Article

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