Characteristics of an oxygen barrier based on Bi-layered Ir

Integrated Ferroelectrics

Volumn 53, Issue , 2003, Pages 279-286

  Moon, B K ^a,b   Arisumi, O ^a,c   Bruchhaus, R ^a,b   Tsutsumi, K ^a,c   Itokawa, H ^a,c   Hornik, K ^a,b   Tsuchiya, T ^a,c   Hilliger, A ^a,b   Lian, J ^a,b   Pinnow, C U ^a,b   Ozaki, T ^a,c   Kunishima, I ^a,c   Nagel, N ^a,b   Yamakawa, K ^a,c   Beitel, G ^a,b  

^a CENTER FOR DRUG EVALUATION AND RESEARCH   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

bi layer; Capacitor over plug; FeRAM; Hillock; Ir; Oxygen barrier; PZT; Rapid thermal annealing; Roughening; Stress

Indexed keywords

CAPACITOR OVER PLUG; OXYGEN BARRIER; OXYGEN DIFFUSION; ROUGHENING;

DIFFUSION; FERROELECTRIC DEVICES; IRIDIUM; LAYERED MANUFACTURING; NONVOLATILE STORAGE; OXYGEN; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING;

BISMUTH COMPOUNDS;

EID: 33745843512     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390258192     Document Type: Article

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